Denis Shamiryan

Denis Shamiryan

 

 

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Patents

  1. T. Abell, J. Schuhmacher, D. Shamiryan. Method of sealing low-k dielectrics and devices made thereby. US patent application number: 10/879,899; 2004
  2. M.Baklanov, K.Mogilnikov, K.Maex, D.Shamiryan, and F.Dultsev. Method and apparatus for characterization of porous films. Patent US 6,662,631 B2, Dec. 16, 2003.
  3. M.Baklanov, D.Shamiryan, K.Maex, and S.Vanhaelemeersch. A method to produce a porous oxygen-silicon layer. Patent US 6,593,251 B2, Feb. 12, 2001

Journal papers

  1. S. Beckx, M. Demand, S. Locorotondo, K. Henson, M. Claes, V. Paraschiv, D. Shamiryan, P. Jaenen, W. Boullart, S. Degendt, S. Biesemans, S. Vanhaelemeersch, J. Vertommen, B. Coenegrachts. Implementation of high-k and metal gate materials for the 45 nm node and beyond: gate patterning development. Microelectronic Reliability, 45 (2005) 1007
  2. D. Shamiryan, M. R. Baklanov, W. Boullart. “Highly sensitive monitoring of Ru etching using optical emission”. Electrochem. Solid State Lett., 8 (2005) G176-G178.
  3. D. Shamiryan, M. R. Baklanov, K. Maex. “Revealing the Porous Structure of Low-k Materials through Solvent Diffusion” in Materials for Information Technology ed. by E. Zschech, Springer (2005) 289.
  4. R. Vos, E. Kesters, S. Garaud, R. De Waele, K. Kenis, M. Lux, H. Kraus, J. Snow, D. Shamiryan, G. Catana, W. Deweerd, T. Schram, S. DeGendt and P. Mertens. Wafer backside cleaning strategies for high-k/metal gate processing. Solid State Phenomena, 103-104 (2005) 241-244.
  5. D.Shamiryan, T.Abell, F.Iacopi, and K.Maex. Low-k dielectric materials. Mat. Today N1 (2004) 34-39
  6. K.P.Mogilnikov, M.R.Baklanov, D.Shamiryan, and M.Petkov. A discussion of the practical importance of positron annihilation life time spectroscopy percolation threshold in evaluation of porous low-k dielectrics. Jpn. J. Appl. Phys. 43 (2004) 247-248.
  7. A.Martin Hoyas, J. Shuchmacher, D. Shamiryan, J. Waeterloos, W. Besling, J. P. Celis, and K. Maex. Growth and characterization of atomic layer deposited WC0.7N0.3 on polymer films. J. Appl. Phys. 95 (2004) 381-388
  8. D.Shamiryan, M.R.Baklanov, Z.S.Yanovitskaya, A.V.Zverev,  Z.Tokei, F.Iacopi, K.Maex. Evaluation of thin Ta(N) film integrity deposited on porous glasses. Optica applicata, 33, (2003) pp. 91-96 .
  9. D.Shamiryan, T.Abell, Q.T.Le and K.Maex. Pinhole density measurements of barriers deposited on low-k films. Microelctr. Eng. 70/2-4 (2003) pp. 341-345.
  10. Z.S.Yanovitskaya, A.V.Zverev, D.Shamiryan and K.Maex. Simulations of diffusion barrier deposition on porous low-k films. Microelctr. Eng. 70/2-4 (2003) pp. 363-367.
  11. K.Maex, M.R.Baklanov, D.Shamiryan, F.Iacopi, S.Brongersma and Z.S.Yanovitskaya. Low dielectric constant materials for microelectronics. J. Appl. Phys., 93 (2003) pp. 8793-8841 
  12. D.Shamiryan, M.R.Baklanov, and K.Maex. Diffusion barrier integrity evaluation by ellipsometric porosimetry. J. Vac. Sci. Technol. B, 21 (2003) 220-226.
  13. D.Shamiryan, M.Baklanov, S.Vanhaelemeersch, and K.Maex. Comparative study of SiOCH low-k film with varied porosity interacting with etching and cleaning plasma. J. Vac. Sci. Technol. B, 20 (2002) pp.1923-1928.
  14. F.Iacopi, Zs.Tőkei, Q.T. Le, D.Shamiryan, T.Conard, B.Brijs, U. Kreissig, M.Van Hove, and K. Maex. Factors affecting an efficient sealing of porous low-k dielectrics by Physical Vapour Deposition Ta(N) thin films. J. Appl. Phys., 92 (2002) pp.1548-1554.
  15. A. Satta, D. Shamiryan, M.R. Baklanov, G. P. Beyer, Q. T. Le, Caroline M. Whelan, Karen Maex and A. Vantomme. The Removal of Cu Oxides by Ethyl Alcohol monitored in-situ by Spectroscopic Ellipsometry. J. Electrochem. Soc. 150 (2003) pp. G300-G306.
  16. D. Ernur, S. Kondo, D. Shamiryan, and K. Maex. Investigation of barrier and slurry characteristics on the galvanic corrosion of copper. Microelectronic Engineering, 64 (2002) pp.117-124.
  17. D.Shamiryan, K.Weidner, W.D.Gray, M.R.Baklanov, S.Vanhaelemeersch, and K.Maex. Comparative study of PECVD SiOCH low-k films obtained at different deposition conditions. Microelectronic Engineering, 64 (2002) pp.361-366.
  18. M.R.Baklanov, D.Shamiryan, Zs.Tőkei, G.P.Beyer, T.Conard, S.Vanhaelemeersch, and K.Maex. Characterization of Cu surface cleaning by hydrogen plasma. J. Vac. Sci. Technol. B 19 (2001) pp.1201-1211.
  19. D.Shamiryan, M. R.Baklanov, S.Vanhaelemeersch, and K.Maex. Controllable change of porosity 3-Methylsilane low-k dielectric film. Electrochemical and Solid State Letters. 4 (2001) pp. F3-F5.
  20. D.Shamiryan, M. R.Baklanov, and S.Vanhaelemeersch. Modification of low-k SiCOH film porosity by HF solution. Solid State Phenomena 76-77 (2001). pp. 135-138.
  21. D.Shamiryan, M.R.Baklanov, and S.Vanhaelemeersch. Silicon surface cleaning after oxide spacer dry etching. Solid State Phenomena 76-77 (2001) pp. 303-306.
  22. I.G.Neizvestnyi, O.V.Sokolova, and D.Shamiryan. Single electronics. Russian Microelectronics, 28 (1999) pp. 67-88.
  23. I.G.Neizvestnyi, O.V.Sokolova, and D.Shamiryan. Applications of single electron devices. Russian Microelectronics, 28 (1999) pp.135-145.
  24. M.R.Baklanov, A.I.Kistanov, K.P.Mogilnikov, O.V.Sokolova, D.Shamiryan, and Z.S.Yanovitskaya. Interaction of silicon with xenon difluoride. Surface investigation, 12 (1997) pp.1217-1226.

Conference contributions

  1. D. Shamiryan, V. Paraschiv, M. Claes and W. Boullart. Low substrate damage high-k removal after gate patterning. Presented at Defect in Advanced High-k Dielectrics NATO Research workshop, Saint Petersburg, Russia, July 11-14, 2005
  2. N. Collaert, S. Brus, A. De Keersgieter, A. Dixit, I. Ferain, M. Goodwin, A. Kottantharayil, R. Rooyackers, P. Verheyen, Y. Yim, P. Zimmerman, S. Beckx, B. Degroote, M. Demand, M. Kim, E. Kunnen, S. Locorotondo, G. Mannaert, F. Neuilly, D. Shamiryan, C. Baerts, M. Ercken, D. Laidler, F. Leys, R. Loo, J. Lisoni, J. Snow, R. Vos, W. Boullart, I. Pollentier, S. De Gendt, K. De Meyer, M. Jurczak, and S. Biesemans. Integration challenges for multi-gate devices. Proceedings International Conference on IC Design and Technology – ICICDT, Austin, TX, May 9-11, (2005) pp. 187-194
  3. D. Shamiryan, V. Paraschiv, S. Beckx, W. Boullart and S. Vanhaelemeersch. TaN metal gate etch with BCl3/O2 plasma: gate profile and impact on high-k removal process. Presented at the Sixth International Conference on Microelectronics and Interfaces (ICMI), Santa Clara, California March 21-23, 2005
  4. P. Leray, D. Shamiryan. Etch effect on segmented overlay target. Presented at the Sixth International Conference on Microelectronics and Interfaces (ICMI), Santa Clara, California March 21-23, 2005
  5. M. R. Baklanov, Y. Travaly, Q. T. Le, D. Shamiryan and S. Vanhaelemeersch, Porosity and Critical Characteristics of Silica Based Low Dielectric Constant Films. Proceedings of the 207th Meeting of The Electrochmical Society in Quebec, Canada May 15-20, 2005. Silicon Nitride, Silicon Dioxide, Thin Insulating Films and Other Emerging Dielectrics VIII, Ed. R.E.Sah, M.J.Deen, J.F.Zhang, J.Yota, Y.Kamakura. (2005)179-198
  6. R. Loo, P. Verheyen, G. Eneman, R. Rooyackers, F. Leys, D. Shamiryan, K. De Meyer, P. Absil, and M. Caymax. Characteristics of selective epitaxial SiGe deposition processes for Recessed source/drain applications. Accepted for Fourth International Conference on Silicon Epitaxy and Heterostructures ICSI-4 Awaji Island, Hyogo, Japan, May 23-26, 2005
  7. P. Verheyen, N. Collaert, R. Rooyackers, R. Loo, D. Shamiryan, A. DE Keersgieter, G. Eneman, F. Leys, A. Dixit, M. Goodwin, Y. S. Yim, M. Caymax, K. De Meyer, P. Absil, M. Jurczak, and S. Biesemans. 25% drive current improvement for p-type multiple gate FET (MuGFET) devices by the introduction of recessed Si0.8Ge0.2 in the source and drain regions. Digest of technical papers of VLSI Technology Symposium, Kyoto, Japan, June 14 -16, (2005) 194-195.
  8. W. Deweerd, T. Schram, G. Catana, D. Shamiryan, S. Garaud, D. Hellin, S. De Gendt, M. Heyns, S. Wickramanayaka, T. Kawashima, N. Yamada, J. Vertommen and R. Lander. Introducing novel metal gate materials for decananometer CMOS in the agile fab: a case study. Proc. of the 2004 International Symposium on Semiconductor Manufacturing (2004) pp.53-56
  9. T. Abell, D. Shamiryan, M. Patz and K. Maex. Correlation between solvent diffusion, porosity and pore sealing for low k dielectrics. Accepted for Advanced Metallization Conference (AMC2003), 21-23 October, 2003, Montreal, Canada.
  10. D.Shamiryan, Z.S.Yanovitskaya, J.Schuhmacher, A.M.Hoyas, and K.Maex. Surface closure during atomic layer depostion. Presented at European Congress on Advanced Materials and Processes (EUROMAT2003), 1-4 September, 2003, Lausanne, Switzerland.
  11. D.Shamiryan, M.R.Baklanov, K. Moguiulnikov, and K.Maex. Revealing of pore structure through solvent diffusion. Presented at European Congress on Advanced Materials and Processes (EUROMAT2003), 1-4 September, 2003, Lausanne, Switzerland.
  12.  J. Schuhmacher, A. Satta, A. Martin-Hoyas, D. Shamiryan, G. Beyer, T. Abell, V. Sutcliffe, G. Tempel, M. Stokhof, H. Bastings, M. Schaekers, H. Sprey, K. Maex. Atomic Layer Deposited Films for Interconnects. Presented at European Congress on Advanced Materials and Processes (EUROMAT2003), 1-4 September, 2003, Lausanne, Switzerland.
  13. D.Shamiryan and K.Maex. Solvent diffusion in porous low-k materials. Presented at Materials Research Society (MRS) Spring Meeting, 21-25 April 2003, San Francisco, CA.
  14. D.Ernur, J.Shcuhmacher, V.Terzieva, D.Shamiryan, and K.Maex. Galvanic corrosion testing of WCxNy barrier metal in H2O2 based slurries. MRS proceedings of Advanced Metallization Conference (AMC), 1-3 October 2002, San Diego, California. Edited by B.M.Melnick, T.S.Cale, S.Zaima and T.Ohta, pp. 95-101.
  15. T.Abell, D.Shamiryan, J.Shcuhmacher, W.Besling, V.Sutcliffe, and K.Maex. Precursor penetration and sealing of porous CVD SiCOH low k dielectric for Atomic Layer Deposition of WCxNy. MRS proceedings of Advanced Metallization Conference (AMC), 1-3 October 2002, San Diego, California. Edited by B.M.Melnick, T.S.Cale, S.Zaima and T.Ohta, pp. 717-723.
  16. D.Shamiryan, Z.S.Yanovitskaya, F.Iacopi, and K.Maex. Barrier deposition on porous low-k films. MRS proceedings of Advanced Metallization Conference (AMC), 1-3 October 2002, San Diego, California. Edited by B.M.Melnick, T.S.Cale, S.Zaima and T.Ohta, pp. 829-833.
  17. A. Martin-Hoyas, D. Shamiryan, J. Schuhmacher, M. Schaekers, and S. Vanhaelemeersch. Atomic layer deposited diffusion barrier films on aromatic hydrocarbon polymers for interconnects. Presented at Atomic Layer Deposition (ALD2002) conference, 19-21 August 2002, Seoul, Korea.
  18. J. Van Aelst, G. Moyaerts, D. Shamiryan, J. Van Olmen, R. Hoofman, H. Struyf, G. Mannaert, S. Vanhaelemeersch, and W. Boullart. Integration of Microstripр 6020 as a post-etch wet clean solution for multi-generation Cu-BEOL applications. Presented at International Sematech Ultra Low-k Workshop (6-7 June 2002, SanFransisco, CA).
  19. T.Abell, Y.Zhou, Q.T.Le, D.Shamiryan, M.Moinpour, and J.Leu. Ellipsometric porosimetry characterization of CVD and spin-on ultra low-k materials subjected to oxygen plasma. Presented at International Sematech Ultra Low-k Workshop (6-7 June 2002, SanFransisco, CA).
  20. E.Augendre, R.Rooyackers, D.Shamiryan, C.Ravit, M.Jurczak, and G.Badenes. Controlling STI-related parasitic conduction in 90 nm CMOS and below. Proceedings of 32nd European Solid State Device Research Conference ESSDERC 2002, 24-26 Sept. 2002, Firenze, Italy.
  21. D.Shamiryan, M.R.Baklanov, Zs.Tőkei, F. Iacopi, and K.Maex. Evaluation of Ta(N) diffusion barrier integrity on porous low-k films. MRS proc. of Advanced Metallization Conference 2001, ed. by A.J.McKerrow, Y.Shacham-Diamant, S.Zaima, and T.Ohba, Montreal, Canada, (2001) pp.279-285.
  22. F.Iacopi, Zs.Tőkei, D.Shamiryan, T.Le Quoc, M.Malhouitre, M.Van Hove, K. Maex. Overcoming integrity issues of I-PVD deposited Ta(N) barriers on inorganic porous low-k’s. MRS proc. of Advanced Metallization Conference 2001, ed. by A.J.McKerrow, Y.Shacham-Diamant, S.Zaima, and T.Ohba, Montreal, Canada, (2001) pp. 61-66.
  23. M.Lepage, D.Shamiryan, M.Baklanov, H.Struyf, G.Mannaert, S.Vanhaelemeersch, K.Weidner and H.Meynen. Optimization of Etching and Stripping Chemistries for Z3MSÔ Low-k. Proceedings of International Interconnection Technologies Conference (IITC2001); San Francisco, CA, USA, 2001, pp.174-176.
  24. D.Shamiryan, M. R.Baklanov, S.Vanhaelemeersch, and K.Maex. Effect of HF solution on the porous structure of a low-k SiCOH film. Proceedings of Advanced Metallization Conference 2000 (AMC2000) edited by D.Edelstein, G.Dixit, Y.Yasuda, and T.Ohba; pp.635-639.
  25. M. R. Baklanov, D.Shamiryan, and K.Maex. Feasibility of hydrogen plasma for cleaning of Cu surface before barrier deposition. Presented at Materials for Advanced Metallization Conference 2000 (MAM2000).
  26. M. R.Baklanov, D.Shamiryan, G. P.Beyer, T.Conard, S.Vanhaelemeersch, and K.Maex. Characterization of Cu surface cleaning by downstream N2/H2 plasma. Proceedings of Advanced Metallization Conference 2000 (AMC2000) edited by D.Edelstein, G.Dixit, Y.Yasuda, and T.Ohba; pp.153-159.
  27. M. R. Baklanov, E.Kondoh, D.Gidley, E.Lin, W. L.Wu, H.Arao, K. P.Mogilnikov, D.Shamiryan, and A.Nakashima. Non-destructive determination of pore size distribution of low-k porous SOG films. Presented at the 60th Japan Society of Applied Physics Autumn Meeting 2000; Japan
  28. R.Donaton, F.Iacopi, M. R.Baklanov, D.Shamiryan, T.Komiya, B.Coenegrachts, H.Struyf, M.Lepage, M.Meuris, M.Van Hove, W. D.Gray, H.Meynen, D.De Roest, S.Vanhaelemeersch, and K.Maex. Physical and electrical characterization of silsesquioxane-based ultra-low k dielectric films. Proceedings of International Interconnect Technology Conference (IITC2000), pp. 93-95.

 

 

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Denis Shamiryan